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Transistor - Field Effect Transistor and Bipolar Junction Transistor
This course can also be taken for academic credit as ECEA 5632, part of CU Boulder’s Master of Science in Electrical Engineering degree.
This course presents in-depth discussion and analysis of metal-oxide-semiconductor field effect transistors (MOSFETs) and bipolar junction transistors (BJTs) including the equilibrium characteristics, modes of operation, switching and current amplifying behaviors.
At the end of this course learners will be able to:
1. Understand and analyze metal-oxide-semiconductor (MOS) device
2. Understand and analyze MOS field effect transistor (MOSFET)
3. Understand and analyze bipolar junction transistor (BJT)
Duration
3 Months
Institution
University of Colorado Boulder
Format
Online
Eligibility Criteria
school
Academic Foundation
A recognized Bachelor’s degree or high school equivalent required for admission into University of Colorado Boulder.
language
Language Proficiency
English proficiency required. IELTS, TOEFL, or standard medium-of-instruction certificates accepted.
Detailed Fees Breakdown
Base Tuition Fee
$392
Total Est. Investment
$392
Scholarships and early-bird waivers may apply. Contact admissions for exact institutional fees.
Academic Trajectory
Program Outcome
Graduates of the Transistor - Field Effect Transistor and Bipolar Junction Transistor program at University of Colorado Boulder are equipped with global perspectives, ready to excel in international markets and top-tier career opportunities.